FGW15N40A Description
This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where bigger, more expensive packages are impractical. The gate is ESD protected with a zener diode.
FGW15N40A Key Features
- VCE(SAT) = 4.4V at IC=150A
- tfl = 1.1µs, td(OFF)I = 0.46µs
- 2kV ESD Protected
- High Peak Current Density
- 8 package, small footprint, low profile (1mm thick)