FGW15N40A
Description
This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium.
Key Features
- VCE(SAT) = 4.4V at IC=150A
- tfl = 1.1µs, td(OFF)I = 0.46µs
- 2kV ESD Protected
- High Peak Current Density
- TSSOP - 8 package, small footprint, low profile (1mm thick)
